INSITU OHMIC-CONTACT FORMATION TO N-GAAS AND P-GAAS BY MOLECULAR-BEAM EPITAXY

被引：34

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 12期

关键词：

D O I：

10.1063/1.90254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1022 / 1025

页数：4

共 14 条

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