STOICHIOMETRY EFFECTS ON SURFACE-PROPERTIES OF GAAS(100) GROWN INSITU BY MBE

[1] SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1344 - 1352

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[3] CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[6] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[7] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[8] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166

[9] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11): : 1153 - 1155

[10] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[1] SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1344 - 1352

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[3] CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[6] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[7] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[8] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166

[9] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11): : 1153 - 1155

[10] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161