LINE BROADENING DUE TO CARRIER CARRIER SCATTERING IN QUANTUM-WELL HETEROSTRUCTURES

被引：14

作者：

HAMILTON, RAH

REES, P

机构：

[1] Dept. of Phys. and Astron., Univ. of Wales Coll. of Cardiff

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 05期

关键词：

D O I：

10.1088/0268-1242/8/5/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Uncertainty in electron energy levels due to carrier-carrier scattering is thought to cause line broadening in quantum well lasers. Calculations of this effect in the conduction and valence bands are presented. Approximate results applicable over a range of materials, temperatures and Fermi levels are given.

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收藏

页码：728 / 734

页数：7

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