VUV EXCIMER LIGHT-SOURCE FOR DEPOSITION OF AMORPHOUS-SEMICONDUCTORS

被引：22

作者：

KESSLER, F

BAUER, GH

机构：

[1] Institut für Physikalische Elektronik, Universität Stuttgart, D-7000 Stuttgart 80

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90082-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Two different types of a large-area high-intensity VUV dielectric-barrier-discharge lamp for VUV emission have been constructed and operated over a wide range of voltage (0.5-20 kV), frequency (0.1-160 kHz), gas pressure (0.2-3 bar), and electrode spacing (0.7-2 mm). VUV spectra were monitored for pure Ar, Kr, and Xe and their respective mixtures. The spatial excimer photon flux phi has been calculated versus distance x from the lamp window. Due to diffusive spatial radiation the intensity rapidly drops with distance x. With Xe excimer photo-decomposition of Si2H6 we have deposited intrinsic and p-type doped high quality photosensitive amorphous hydrogenated silicon (a-Si:H) (sigma(photo)/sigma(dark) = 10(6)).

引用

页码：430 / 434

页数：5

共 11 条

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