DIRECT UV PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION OF A-SI-H FROM DISILANE USING A DEUTERIUM LAMP

被引：3

作者：

BHATNAGAR, YK

MILNE, WI

机构：

[1] Univ of Cambridge, United Kingdom

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

Y.K.B. thanks The Nehru Trust of Cambridge University for financial support;

D O I：

10.1016/0040-6090(88)90429-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6

引用

收藏

页码：237 / 240

页数：4

相关论文

共 6 条

[1] LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES
DEUTSCH, TF
EHRLICH, DJ
OSGOOD, RM
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 175 - 177
[2] GIANINONI I, 1985, 11TH P INT C AM LIQ, P743
[3] PROPERTIES OF A-SI-H PREPARED BY THE PHOTOCHEMICAL DECOMPOSITION OF SI2H6
MISHIMA, Y
ASHIDA, Y
HIROSE, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 707 - 710
[4] PHOTO-CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILM BY DIRECT PHOTOLYSIS
NUMASAWA, Y
YAMAZAKI, K
HAMANO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L792 - L794
[5] PHOTOCHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON THROUGH 185 NM EXCITATION OF MONOSILANE
TARUI, Y
SORIMACHI, K
FUJII, K
AOTA, K
SAITOH, T
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 711 - 714
[6] GROWTH OF HYDROGENATED AMORPHOUS-SILICON FILMS BY ARF EXCIMER LASER PHOTODISSOCIATION OF DISILANE
YOSHIKAWA, A
YAMAGA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (02): : L91 - L93