PHOTOCHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON THROUGH 185 NM EXCITATION OF MONOSILANE

被引：15

作者：

TARUI, Y ^{[1
]}

SORIMACHI, K ^{[1
]}

FUJII, K ^{[1
]}

AOTA, K ^{[1
]}

SAITOH, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

关键词：

D O I：

10.1016/0022-3093(83)90270-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：711 / 714

页数：4

共 8 条

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