ELECTRICAL-PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY REACTIVE EVAPORATION

被引：16

作者：

NOGUCHI, S

SAKATA, H

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 08期

关键词：

D O I：

10.1088/0022-3727/14/8/019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1523 / +

页数：1

共 14 条

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