EPITAXIAL-GROWTH OF CUGASE2 AND CUINSE2 SINGLE-CRYSTALS BY HALOGEN TRANSPORT METHOD USING SE(CH3)(2)

CuGaSe2 and CuInSe2 c-axis orientation single crystals were epitaxially grown on (001) GaAs by the Se(CH3)(2)-halogen transport method. On (001) GaAs, c-axis orientation growth (polycrystal) of CuGaSe2 and CuInSe2 also occurred. In the case of the growth of CuGaSe2 on (001) GaP, the c-axis orientation growth was not realized and the c-axis orientation growth was attained instead. These results do not satisfy the criterion of the minimum lattice mismatch between grown layers and substrates, except for the case of the growth of CuGaSe2 on (001) GaP. CuInSe2 deposited on (111)A GaAs was composed of three sets of (112)-oriented crystallites, while CuInSe2 deposited on (111)B GaAs was composed of six sets of (112)-oriented crystallites. For obtaining CuGaSe2 films which did not peel from the GaAs substrates, it was required to add a small quantity of N-2 to the H-2 atmosphere.