MOLECULAR-BEAM EPITAXIAL-GROWTH AND PROPERTIES OF CUINSE2

被引：11

作者：

NIKI, S ^{[1
]}

MAKITA, Y ^{[1
]}

YAMADA, A ^{[1
]}

OBARA, A ^{[1
]}

MISAWA, S ^{[1
]}

IGARASHI, O ^{[1
]}

AOKI, K ^{[1
]}

KUTSUWADA, N ^{[1
]}

机构：

[1] NIPPON INST TECHNOL,MIYASHIRO,SAITAMA 345,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

CUINSE(2); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; X-RAY DIFFRACTION; ELECTRON DIFFRACTION;

D O I：

10.7567/JJAPS.32S3.161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInSe2 (CIS) films with Cu/In ratios (gamma) ranging from 0.81 to 1.81 have been grown by molecular beam epitaxy on (001)-oriented GaAs substrates at a substrate temperature of T(s) = 450-degrees-C. It is found that Cu-rich films tend to become Se-poor, and In-rich films tend to become Se-rich. X-ray diffraction patterns obtained from these films have shown the peaks with respect to CIS {n00} planes, clearly indicating epitaxial growth. Optical properties of the CIS films have been characterized by means of photoluminescence (PL) spectroscopy at 2 K. Many distinct emission lines including a band edge emission were present on PL spectra obtained from Cu-rich films. A broad emission (lambda approximately 1.45 mum) appeared at gamma = 1.04, then became dominant with further decreasing gamma.

引用

页码：161 / 162

页数：2

共 10 条

[1] THE PHASE-RELATIONS IN THE CU,IN,SE SYSTEM AND THE GROWTH OF CUINSE2 SINGLE-CRYSTALS [J].