CONDITIONS FOR THE FORMATION OF DEFECT-INDUCED BOUND EXCITON EMISSIONS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

OHNISHI, N

MAKITA, Y

ASAKURA, H

IIDA, T

YAMADA, A

SHIBATA, H

UEKUSA, S

MATSUMORI, T

机构：

[1] MEIJI UNIV,KAWASAKI 214,JAPAN

[2] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 13期

关键词：

D O I：

10.1063/1.108629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conditions for the formation of defect-induced bound exciton (DIBE) emissions in GaAs were investigated by molecular beam epitaxial method. Growth was made on both A- and B-polarity substrates with (321), (221), and (211) orientations. For A-polarity samples, (321)A and (211) A presented pronounced DIBE emissions. (221) A, however, exhibited no DIBE emission, instead it presented a dominant carbon donor-carbon acceptor pair emission together with a small hump due to carbon donor-related bound exciton emissions. For B-polarity specimens, DIBE was completely vanished in all the three samples. It was theoretically demonstrated that DIBE is formed only when double-handed Ga adatom site is existing.

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页码：1527 / 1529

页数：3

相关论文

共 13 条

[1] ELECTRONIC-STRUCTURE OF MOLECULAR-BEAM-EPITAXY GROWTH-INDUCED DEFECTS IN GAAS [J].

BEYE, AC ;

GIL, B ;

NEU, G ;

VERIE, C .

PHYSICAL REVIEW B, 1988, 37 (09) :4514-4527

[2] OPTICAL-PROPERTIES OF SHALLOW DEFECT-RELATED ACCEPTORS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHARBONNEAU, S ;

THEWALT, MLW .

PHYSICAL REVIEW B, 1990, 41 (12) :8221-8228

[3] AN OPTICAL CHARACTERIZATION OF DEFECT LEVELS INDUCED BY MBE GROWTH OF GAAS [J].

CONTOUR, JP ;

NEU, G ;

LEROUX, M ;

CHAIX, C ;

LEVESQUE, B ;

ETIENNE, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :811-815

[4] A MODEL FOR SOME DEFECT-RELATED BOUND EXCITON LINES IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

EAVES, L ;

HALLIDAY, DP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (27) :L705-L709

[5] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

HIESINGE.P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470

[6]

KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[7] PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS [J].

MAKITA, Y ;

NOMURA, T ;

YOKOTA, M ;

MATSUMORI, T ;

IZUMI, T ;

TAKEUCHI, Y ;

KUDO, K .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :623-625

[8]

MAKITA Y, 1988, MATER RES SOC S P, V100, P331

[9] EFFECT OF SUBSTRATE ORIENTATION ON THE DEFECT-INDUCED BOUND EXCITON EMISSIONS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

OHNISHI, N ;

MAKITA, Y ;

YAMADA, A ;

ASAKURA, H ;

MATSUMORI, T .

APPLIED SURFACE SCIENCE, 1991, 50 (1-4) :233-236

[10] OBSERVATION OF DISCRETE DONOR-ACCEPTOR PAIR SPECTRA IN MBE GROWN GAAS [J].

REYNOLDS, DC ;

BAJAJ, KK ;

LITTON, CW ;

SMITH, EB ;

YU, PW ;

MASSELINK, WT ;

FISCHER, F ;

MORKOC, H .

SOLID STATE COMMUNICATIONS, 1984, 52 (07) :685-688