PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS

被引：41

作者：

MAKITA, Y

NOMURA, T

YOKOTA, M

MATSUMORI, T

IZUMI, T

TAKEUCHI, Y

KUDO, K

机构：

[1] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

[2] MATSUSHITA ELECT IND CO LTD,TAMA KU,KAWASAKI 214,JAPAN

来源：

关键词：

D O I：

10.1063/1.96093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：623 / 625

页数：3

共 8 条

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[7] STRONGLY POLARIZED BOUND EXCITON LUMINESCENCE FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[8] PHOTO-LUMINESCENCE OF CARBON-IMPLANTED GAAS
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