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PHOTO-LUMINESCENCE OF CARBON-IMPLANTED GAAS
被引:46
作者
:
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
KOSCHEL, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,SALT LAKE CITY,UT 84112
KOSCHEL, W
BRIONES, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,SALT LAKE CITY,UT 84112
BRIONES, F
GLADSTONE, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,SALT LAKE CITY,UT 84112
GLADSTONE, J
PATTERSON, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,SALT LAKE CITY,UT 84112
PATTERSON, G
机构
:
[1]
UNIV UTAH,SALT LAKE CITY,UT 84112
[2]
HEWLETT PACKARD CO,SANTA ROSA TECHNOL CTR,SANTA ROSA,CA 95404
来源
:
APPLIED PHYSICS LETTERS
|
1981年
/ 39卷
/ 08期
关键词
:
D O I
:
10.1063/1.92830
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:581 / 582
页数:2
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INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
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[J].
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[2]
GOLDSTEIN B, 1960, B AM PHYS SOC, V2, P407
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PHOTOLUMINESCENCE STUDY OF CARBON DOPED GALLIUM-ARSENIDE
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[J].
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(07)
: 438
-
440
[5]
Thonsen P.V., 1963, KGL DAN SELSK MAT FY, V33, P1
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INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
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[J].
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1975,
36
(10)
: 1041
-
1053
[2]
GOLDSTEIN B, 1960, B AM PHYS SOC, V2, P407
[3]
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[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(07)
: 1121
-
1126
[4]
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SHIN, BK
论文数:
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引用数:
0
h-index:
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机构:
SYST RES LABS INC,DAYTON,OH 45440
SYST RES LABS INC,DAYTON,OH 45440
SHIN, BK
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(07)
: 438
-
440
[5]
Thonsen P.V., 1963, KGL DAN SELSK MAT FY, V33, P1
←
1
→