CARBON-ION-IMPLANTED GALLIUM-ARSENIDE

被引：23

作者：

SHIN, BK ^{[1
]}

机构：

[1] SYST RES LABS INC,DAYTON,OH 45440

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 07期

关键词：

D O I：

10.1063/1.89111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：438 / 440

页数：3

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