NEW EMISSION-LINES IN HIGHLY CARBON ION-IMPLANTED GAAS

被引：22

作者：

MAKITA, Y

YOKOTA, M

NOMURA, T

TANOUE, H

TAKAYASU, I

KATAOKA, S

IZUMI, T

MATSUMORI, T

机构：

[1] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

[2] MITSUBISHI GAS CHEM CO,KATSUSHIKA KU,TOKYO 125,JAPAN

来源：

关键词：

D O I：

10.1016/0168-583X(85)90594-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：433 / 437

页数：5

共 8 条

[1] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS
BRIONES, F
COLLINS, DM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 847 - 866
[2] AN OPTICAL CHARACTERIZATION OF DEFECT LEVELS INDUCED BY MBE GROWTH OF GAAS
CONTOUR, JP
NEU, G
LEROUX, M
CHAIX, C
LEVESQUE, B
ETIENNE, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 811 - 815
[3] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS
HEIM, U
HIESINGE.P
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02): : 461 - 470
[4] ELECTRON-IRRADIATION EFFECT ON EMISSION BAND ASSOCIATED WITH CARBON ACCEPTORS IN N-GAAS
JEONG, M
SHIRAFUJI, J
INUISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 795 - 796
[5] KUNZEL H, 1981, I PHYS C SER, V56, P519
[6] PANKOVE JI, 1966, J PHYS SOC JPN, VS 21, P298
[7] PHOTO-LUMINESCENCE OF CARBON-IMPLANTED GAAS
STRINGFELLOW, GB
KOSCHEL, W
BRIONES, F
GLADSTONE, J
PATTERSON, G
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 581 - 582
[8] MG+ AND BE+ ION-IMPLANTATION INTO ALXGA1-XAS
YOKOTA, M
ASHIGAKI, S
MAKITA, Y
KANAYAMA, T
TANOUE, H
TAKAYASU, I
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 711 - 718