MG+ AND BE+ ION-IMPLANTATION INTO ALXGA1-XAS

被引：6

作者：

YOKOTA, M

ASHIGAKI, S

MAKITA, Y

KANAYAMA, T

TANOUE, H

TAKAYASU, I

机构：

[1] HOSEI UNIV,KOGANEI,TOKYO 184,JAPAN

[2] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90872-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：711 / 718

页数：8

共 23 条

[1] MG+ IMPLANTATION INTO ALXGA1-XAS
ASHIGAKI, S
MAKITA, Y
KANAYAMA, T
TSURUSHIMA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3892 - 3893
[2] BOLTAKS BI, 1975, SOV PHYS SEMICOND+, V9, P545
[3] DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS
CHOE, BD
YEO, YK
PARK, YS
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4742 - 4746
[4] DEVLIN WJ, 1979, I PHYS C SER, V45, P510
[5] DOPING CHARACTERISTICS AND ELECTRICAL-PROPERTIES OF BE-DOPED P-TYPE ALXGA1-XAS BY LIQUID-PHASE EPITAXY
FUJITA, S
BEDAIR, SM
LITTLEJOHN, MA
HAUSER, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5438 - 5444
[6] HUNSPERGER RG, 1972, J APPL PHYS, V43, P1313
[7] KANAYAMA T, COMMUNICATION
[8] PHOTO-LUMINESCENCE OF GE-DOPED ALXGA1-X AS GROWN BY LIQUID-PHASE EPITAXY
KANEKO, K
AYABE, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6337 - 6341
[9] KASAHARA J, 1981, APPL PHYS LETT, V38, P798, DOI 10.1063/1.92135
[10] Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153