STRONGLY POLARIZED BOUND EXCITON LUMINESCENCE FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：55

作者：

SKOLNICK, MS

HARRIS, TD

TU, CW

BRENNAN, TM

STURGE, MD

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] BELL COMMUN RES,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

LASERS - Applications - LIGHT - Polarization - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1063/1.95601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report strongly polarized luminescence spectra in the 1. 504-1. 511-ev spectral region in GaAs layers grown by molecular beam epitaxy. Up to 50 individual features are observed in very well resolved spectra. The sharp lines are attributed to bound exciton recombination at defect pairs preferentially oriented parallel to one of the (110) directions in the (001) growth plane. The preferential orientation occurs because of the inequivalence during planar growth of the (110) and intersections of (111) plane and (001) surface directions in the zincblende lattice.

引用

页码：427 / 429

页数：3

共 22 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].