A MODEL FOR SOME DEFECT-RELATED BOUND EXCITON LINES IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

EAVES, L

HALLIDAY, DP

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 27期

关键词：

D O I：

10.1088/0022-3719/17/27/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

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页码：L705 / L709

页数：5

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