LATERAL GROWTH OF SINGLE-CRYSTAL INP OVER DIELECTRIC FILMS BY ORIENTATION-DEPENDENT VPE

被引：25

作者：

VOHL, P

BOZLER, CO

MCCLELLAND, RW

CHU, A

STRAUSS, AJ

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(82)90460-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：410 / 422

页数：13

共 9 条

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[4] LEONBERGER FJ, 1981, APPL PHYS LETT, V38, P5
[5] MCCLELLAND RW, 1980, APPL PHYS LETT, V37, P6
[6] SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES
SHAW, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) : 904 - &
[7] SHAW DW, 1967, I PHYS C SER, V3, P10
[8] TAUSCH FW, 1965, J ELECTROCHEM SOC, V112, P706, DOI 10.1149/1.2423670
[9] VAPOR-PHASE EPITAXY OF GAINASP AND INP
VOHL, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 101 - 108