VAPOR-PHASE EPITAXY OF GAINASP AND INP

被引：21

作者：

VOHL, P

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90255-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：101 / 108

页数：8

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