COMPARATIVE THERMODYNAMIC ANALYSIS OF INP AND GAAS DEPOSITION

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[2] DISSOCIATION ENERGIES OF THE GASEOUS MONO-HALIDES OF BORON, ALUMINIUM, GALLIUM, INDIUM AND THALLIUM [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1960, 56 (07): : 952 - 958

[3] THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 932 - &

[4] CHEMICAL EQUILIBRIUM IN MULTICOMPONENT POLYPHASE SYSTEMS [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 32 (06) : 1880 - 1881

[5] DAY GF, 1966, AF336151988 CONTR

[6] ETUDE THERMODYNAMIQUE DES COMPOSES-III-V ET COMPOSES-II-VI PAR SPECTROMETRIE DE MASSE [J]. JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1958, 55 (10) : 721 - 732

[7] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[8] ERMOLENKO EN, 1965, KHIMICHESKAYA SVYAZ, P128

[9] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) : 585 - 592

[10] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 814 - 817

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[2] DISSOCIATION ENERGIES OF THE GASEOUS MONO-HALIDES OF BORON, ALUMINIUM, GALLIUM, INDIUM AND THALLIUM [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1960, 56 (07): : 952 - 958

[3] THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 932 - &

[4] CHEMICAL EQUILIBRIUM IN MULTICOMPONENT POLYPHASE SYSTEMS [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 32 (06) : 1880 - 1881

[5] DAY GF, 1966, AF336151988 CONTR

[6] ETUDE THERMODYNAMIQUE DES COMPOSES-III-V ET COMPOSES-II-VI PAR SPECTROMETRIE DE MASSE [J]. JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1958, 55 (10) : 721 - 732

[7] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[8] ERMOLENKO EN, 1965, KHIMICHESKAYA SVYAZ, P128

[9] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) : 585 - 592

[10] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 814 - 817