FAST-NEUTRON IRRADIATION FOR CZOCHRALSKI-GROWN SILICON

被引：8

作者：

XU, YS

LI, YX

LIU, CC

WANG, HM

机构：

[1] Material Research Center, Hebei Institute of Technology

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 22期

关键词：

D O I：

10.1063/1.112572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this investigation, Czochralski grown silicon (CZ-Si) was irradiated by a fast neutron which can introduce irradiated defects into silicon and change the quality and density of point defects in silicon, by the interaction between irradiated defects and oxygen, the controlled precipitation of oxygen, and an excellent intrinsic gettering structure in CZ-Si during heat treatment cycles can be obtained easily. © 1994 American Institute of Physics.

引用

页码：2807 / 2808

页数：2