INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI

被引：376

作者：

TAN, TY ^{[1
]}

GARDNER, EE ^{[1
]}

TICE, WK ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

来源：

关键词：

D O I：

10.1063/1.89340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：175 / 176

页数：2

共 10 条

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[2] BATAVIN VV, 1967, FIZ TVERD TELA+, V8, P2005
[3] Friedel J., 1967, DISLOCATIONS
[4] EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON
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PATRICK, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1869 - 1874
[5] KAISER W, 1957, J APPL PHYS, V28, P332
[6] LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484
[7] MECHANICAL PROPERTIES OF SINGLE CRYSTALS OF SILICON
SYLWESTROWICZ, W
[J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1825 - &
[8] OXYGEN PRECIPITATION AND GENERATION OF DISLOCATIONS IN SILICON
TAN, TY
TICE, WK
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (04): : 615 - 631
[9] TAN TY, 1975, 33RD P ANN EMSA M LA, P252
[10] NUCLEATION OF CUSI PRECIPITATE COLONIES IN OXYGEN-RICH SILICON
TICE, WK
TAN, TY
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 564 - 565