INVESTIGATION OF ETALON EFFECTS IN GAAS-AIGAAS MULTIPLE QUANTUM WELL MODULATORS

被引：37

作者：

WHITEHEAD, M

PARRY, G

WHEATLEY, P

机构：

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1989年 / 136卷 / 01期

关键词：

D O I：

10.1049/ip-j.1989.0012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：52 / 58

页数：7

共 16 条

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[6]

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APPLIED PHYSICS LETTERS, 1984, 45 (01) :13-15

[8] FIELD-INDUCED MODULATIONS OF REFRACTIVE-INDEX AND ABSORPTION-COEFFICIENT IN A GAAS ALGAAS QUANTUM-WELL STRUCTURE [J].

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[10]

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