DOPING DEPENDENCE OF THE ELECTRONIC-STRUCTURE OF SUPERCONDUCTING AND NONSUPERCONDUCTING OXIDES - HIGH-ENERGY SPECTROSCOPIC STUDIES

被引：14

作者：

FUJIMORI, A

NAMATAME, H

机构：

[1] Department of Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo

来源：

PHYSICA C | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)91949-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure of electron- and hole-doped of Cu, Bi, and related 3d-transition-metal oxides has been studied by photoemission spectroscopy. In every system, carrier doping induces new states within the band gap of the parent compound. These "mid-gap states" are distributed mainly below and above the Fermi level for electron and hole doping, respectively. At low doping levels, doped carriers are localized around the impurities or defects, whereas they become itinerant at high doping levels reflecting the first affinity level or ionization state of the parent compound. The electronic structure of superconducting oxides is characterized by the high mobility of itinerant carriers.

引用

页码：51 / 56

页数：6

共 31 条

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