LIQUID-PHASE EPITAXIAL GA0.96AL0.04SB P/N JUNCTIONS

被引：3

作者：

PEROTIN, M

GOUSKOV, L

LUQUET, H

SILVESTRE, P

ABI, PA

MAGALLON, D

BOUGNOT, G

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90166-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：492 / 498

页数：7

共 12 条

[1]

ANDREEV IA, 1985, SOV PHYS SEMICOND+, V19, P987

[2] INSTABILITY OF SLOW SOLID-LIQUID INTERFACE RELAXATION BEFORE THE HETERO-LPE OF III-V COMPOUNDS [J].

BOLKHOVITYANOV, YB ;

CHIKICHEV, SI .

CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (07) :847-857

[3] EXACT CALCULATION OF CRYSTAL-GROWTH RATES UNDER CONDITIONS OF CONSTANT COOLING RATE [J].

GHEZ, R .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) :153-159

[4] RESONANT ENHANCEMENT OF IMPACT IN GA1-XALXSB [J].

HILDEBRAND, O ;

KUEBART, W ;

PILKUHN, MH .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :801-803

[5] THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS [J].

LAW, HD ;

CHIN, R ;

NAKANO, K ;

MILANO, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :275-283

[6] LIQUID-PHASE-EPITAXIAL GROWTH OF GA0.96AL0.04SB - ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATIONS [J].

LUQUET, H ;

GOUSKOV, L ;

PEROTIN, M ;

JEAN, A ;

RJEB, A ;

ZAROURI, T ;

BOUGNOT, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3582-3591

[7]

LUQUET H, 1987, NOV S TECHN OPT SPIE

[8] GROWTH-KINETICS OF LPE GA0.83AL0.17SB LAYERS GROWN FROM SUPERCOOLED SOLUTIONS [J].

MEBARKI, M ;

SALSAC, P ;

JOULLIE, A ;

BOUGNOT, G .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :637-640

[9] THE PROBLEM OF SUBSTRATE DISSOLUTION IN LPE OF III-V COMPOUNDS IN THE SIMPLE SOLUTION APPROXIMATION - APPLICATION TO THE INXGA1-XASYP1-Y-INP SYSTEM [J].

QUILLEC, M ;

BENCHIMOL, JL .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :76-80

[10]

SYLVESTRE P, 1987, THESIS USTL MONTPELL

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