RELATIONSHIP OF AMBIENT DEPOSITION CONDITIONS TO FORMATION OF THERMALLY ACTIVATED VOIDS IN AL/SI INTERCONNECTS

被引：11

作者：

TICE, W

SLUSSER, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.584854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：106 / 107

页数：2

共 8 条

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[2]

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[4]

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[5]

OWADA N, 1985, 2ND P INT VLSI MULT, P173

[6]

TURNER T, 1985, IEEE IRPS, P142

[7] EFFECTS OF WATER ON THE GROWTH OF ALUMINUM FILMS DEPOSITED BY VACUUM EVAPORATION [J].

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[8] EFFECTS OF OXYGEN ON THE GROWTH OF VAPOR-DEPOSITED ALUMINUM FILMS [J].

VERKERK, MJ ;

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