MEMORIES;
METAL OXIDE SEMICONDUCTOR STRUCTURES AND DEVICES;
ERRORS;
D O I:
10.1049/el:19910831
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
An error correction technique is proposed to increase the noise margin of a multivalued MOS memory. The stored voltage information is first converted to a binary representation. The noise margin of the store voltage is then increased by storing and comparing the least significant bits of the binary representation.