SYNTHESIS OF A DIAMOND AND METAL MIXTURE BY THE CHEMICAL VAPOR-DEPOSITION PROCESS

被引:10
作者
KAWARADA, M
KURIHARA, K
SASAKI, K
机构
[1] Fujitsu Laboratories Ltd., Atsugi 243-01
关键词
D O I
10.1063/1.351266
中图分类号
O59 [应用物理学];
学科分类号
摘要
A mixture of diamond and metal film was synthesized by a hybrid process combining plasma jet chemical vapor deposition and a plasma-spray process. Sprayed molybdenum and tungsten were changed to Mo2C and tungsten carbide, respectively, and the lattice constants of Ni, Fe, and Co were increased by carbon-plasma spraying. Adhesion of film to the substrate was improved using the hybrid process to form a layer 50 to 150-mu-m thick of mixed metal and diamond between the substrate and pure diamond film.
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页码:1442 / 1445
页数:4
相关论文
共 7 条
[1]  
Field J.E., 1979, PROPERTIES DIAMOND
[2]   DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA [J].
KAMO, M ;
SATO, Y ;
MATSUMOTO, S ;
SETAKA, N .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :642-644
[3]  
KAWARADA M, 1989, P SOC PHOTO-OPT INS, V1146, P28
[4]   HIGH-RATE SYNTHESIS OF DIAMOND BY DC PLASMA-JET CHEMICAL VAPOR-DEPOSITION [J].
KURIHARA, K ;
SASAKI, K ;
KAWARADA, M ;
KOSHINO, N .
APPLIED PHYSICS LETTERS, 1988, 52 (06) :437-438
[5]   GROWTH OF DIAMOND PARTICLES FROM METHANE-HYDROGEN GAS [J].
MATSUMOTO, S ;
SATO, Y ;
TSUTSUMI, M ;
SETAKA, N .
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (11) :3106-3112
[6]  
SEAL M, 1991, 1ST P INT C APPL DIA, P3
[7]   VAPOR GROWTH OF DIAMOND ON DIAMOND AND OTHER SURFACES [J].
SPITSYN, BV ;
BOUILOV, LL ;
DERJAGUIN, BV .
JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :219-226