INFLUENCE OF DEFECT GENERATION PROCESSES IN CDIN2S4 SINGLE-CRYSTALS ON THE PHOTOLUMINESCENCE AND RAMAN-SCATTERING SPECTRA

Photoluminescence (PL) and Raman scattering (RS) spectra is explained in dependence of the applied heat treatment conditions are studied. The deformation of the integral PL spectrum is explained by a model within which the local levels are due to the intrinsic defects of the semiconductor. The presence of a wide-band background in the RS spectra and the deformation of the PL spectra characteristic for samples subjected to rapid cooling after annealing at temperatures not lower than T//c approximately equals 300 to 320 degree C are the result of a phase transition of the order-disorder type. The latter occurs at T approximately equals T//c and causes the conversion of the crystal structure from a normal spinel (T less than T//c) into a partially inverted one (T greater than T//c approximately equals 320 degree C).