ARSENIC-INDUCED STEP REARRANGEMENTS ON VICINAL SI(111) SUBSTRATES

被引：13

作者：

OHNO, TR ^{[1
]}

WILLIAMS, ED ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期

关键词：

D O I：

10.1063/1.101957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2628 / 2630

页数：3

共 27 条

[1] NISI2 ON SI(111) .2. EFFECTS OF SUBSTRATE-TEMPERATURE AND DEFECT STRUCTURE [J].

AKINCI, G ;

OHNO, TR ;

WILLIAMS, ED .

SURFACE SCIENCE, 1988, 201 (1-2) :27-46

[2] ORIENTATIONAL STABILITY OF SILICON SURFACES [J].

BARTELT, NC ;

WILLIAMS, ED ;

PHANEUF, RJ ;

YANG, Y ;

DASSARMA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1898-1905

[3]

BARTELT NC, UNPUB

[4] GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J].

BECKER, RS ;

SWARTZENTRUBER, BS ;

VICKERS, JS ;

HYBERTSEN, MS .

PHYSICAL REVIEW LETTERS, 1988, 60 (02) :116-119

[5] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J].

BRINGANS, RD ;

UHRBERG, RIG ;

OLMSTEAD, MA ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1986, 34 (10) :7447-7450

[6]

CIBERT J, 1989, APPL PHYS LETT, V54, P8928

[7] STRUCTURAL PERFECTION OF THE SI(111)-(1X1) AS SURFACE [J].

COPEL, M ;

TROMP, RM .

PHYSICAL REVIEW B, 1988, 37 (05) :2766-2769

[8] ATOMIC-STRUCTURE OF THE ARSENIC-SATURATED SI(111) SURFACE [J].

COPEL, M ;

TROMP, RM ;

KOHLER, UK .

PHYSICAL REVIEW B, 1988, 37 (18) :10756-10763

[9] GEOMETRICAL STABILITY OF SHALLOW SURFACE DEPRESSIONS DURING GROWTH OF (111) AND (100) EPITAXIAL SILICON [J].

DRUM, CM ;

CLARK, CA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) :664-&

[10] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

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