OBSERVATION OF ELECTRON TRAPS IN ELECTROCHEMICALLY DEPOSITED CDTE-FILMS

被引:32
作者
BASOL, BM
STAFSUDD, OM
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D O I
10.1016/0038-1101(81)90005-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:121 / 125
页数:5
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共 14 条
[1]   TRANSIENT AND STEADY-STATE SPACE-CHARGE-LIMITED CURRENT IN CDTE [J].
CANALI, C ;
NICOLET, MA ;
MAYER, JW .
SOLID-STATE ELECTRONICS, 1975, 18 (10) :871-&
[3]  
Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[4]  
LHERMITTE C, 1979, THIN SOLID FILMS, V57, P83
[5]   CHARACTERIZATION OF CDTE WITH PHOTOELECTRONIC TECHNIQUES [J].
MANCINI, AM ;
MANFREDOTTI, C ;
DEBLASI, C ;
MICOCCI, G ;
TEPORE, A .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :255-261
[6]  
MARFAING Y, 1974, METAL SEMICONDUCT 22, P201
[7]   ACTIVATION-ENERGY ANALYSIS OF DEFECT LEVELS IN SEMI-INSULATING CDTE DETECTOR MATERIAL [J].
PANDE, KP ;
ROBERTS, GG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (05) :2017-2020
[8]   CATHODIC DEPOSITION OF CDTE FROM AQUEOUS-ELECTROLYTES [J].
PANICKER, MPR ;
KNASTER, M ;
KROGER, FA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :566-572
[9]   TUNNELING IN CDTE SCHOTTKY BARRIERS [J].
PARKER, GH ;
MEAD, CA .
PHYSICAL REVIEW, 1969, 184 (03) :780-&
[10]   BARRIER HEIGHTS ON CADMIUM TELLURIDE SCHOTTKY SOLAR-CELLS [J].
PONPON, JP ;
SIFFERT, P .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :427-430