TRANSIENT AND STEADY-STATE SPACE-CHARGE-LIMITED CURRENT IN CDTE

被引：20

作者：

CANALI, C ^{[1
]}

NICOLET, MA ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 10期

关键词：

D O I：

10.1016/0038-1101(75)90011-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：871 / &

共 13 条

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[2]

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[3] CHARACTERIZATION OF HIGH RESISTIVITY CDTE FOR GAMMA-RAY DETECTORS [J].

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ALBERIGI.A ;

ZANIO, KR .

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[4]

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[5]

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[6]

Lemke H., 1970, Physica Status Solidi A, V1, P287, DOI 10.1002/pssa.19700010212

[7]

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[8]

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[9] INFLUENCE OF TRAPPING AND DETRAPPING EFFECTS IN SI(LI), GE(LI) AND CDTE DETECTORS [J].

MAYER, JW ;

ZANIO, KR ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (03) :221-+

[10]

MAYER JW, 1968, SEMICONDUCTOR DETECT, pCH5

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