DESIGN AND APPLICATION OF GAAS-MESFET CURRENT MIRROR CIRCUITS

被引：9

作者：

TOUMAZOU, C ^{[1
]}

HAIGH, DG ^{[1
]}

机构：

[1] UCL, DEPT ELECTR ELECT ENGN, LONDON WC1 7JE, ENGLAND

来源：

IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1990年 / 137卷 / 02期

关键词：

D O I：

10.1049/ip-g-2.1990.0018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents a simple, high performance circuit for an inverting, voltage following current mirror suitable for gallium arsenide technology. Cascoding techniques are introduced to achieve accurate current ratios and low parasitic conductance elements. The applications of the current mirror in the design of high gain, fast settling operational amplifiers and in a differential to single ended convertor circuit are demonstrated.

引用

页码：101 / 108

页数：8

共 17 条

[1]

ALLEN PE, 1987, 1987 P IEEE ISCAS PH

[2] NEGATIVE CURRENT-MIRROR USING N-P-N TRANSISTORS [J].