SPUTTERED SILICATE-LIMIT NASICON THIN-FILMS FOR ELECTROCHEMICAL SENSORS

被引：17

作者：

IVANOV, D

CURRIE, J

BOUCHARD, H

LECOURS, A

ANDRIAN, J

YELON, A

POULIN, S

机构：

[1] Département de Génie Physique, Ecole Polytechnique, CP 6079, Succ. A, Montréal

来源：

SOLID STATE IONICS | 1994年 / 67卷 / 3-4期

关键词：

D O I：

10.1016/0167-2738(94)90020-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have demonstrated for the first time the production of silicate-limit NASICON [Na4Zr2(SiO4)3] in the form of thin films. The ionic conductivity was investigated as a function of the temperature. The best measured conductivity at 300-degrees-C is 0.5 X 10(-4) (S/cm)-1. We report here on the evaluation of the mechanical properties sputtered NASICON thin films

引用

页码：295 / 299

页数：5

共 9 条

[1] IMPEDANCE OF METALS IN PASSIVE AND TRANSPASSIVE REGIONS [J].