FREE HOLE-NEUTRAL DONOR RECOMBINATION IN HIGH-PURITY GAAS

被引：21

作者：

ULBRICH, R

MORETH, B

机构：

[1] IBM,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNIV FRANKFURT,PHYS INST,6 FRANKFURT,WEST GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 14卷 / 04期

关键词：

D O I：

10.1016/0038-1098(74)90912-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：331 / 334

页数：4

共 20 条

[1] PHOTON COUNTING APPARATUS FOR KINETIC AND SPECTRAL MEASUREMENTS [J].

BACHRACH, RZ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (05) :734-&

[2] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+

[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[4] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J].

DUMKE, WP .

PHYSICAL REVIEW, 1963, 132 (05) :1998-&

[5] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

[6] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS [J].

GILLEO, MA ;

BAILEY, PT ;

HILL, DE .

PHYSICAL REVIEW, 1968, 174 (03) :898-&

[7] LIFETIMES OF BOUND EXCITONS IN CDS [J].

HENRY, CH ;

NASSAU, K .

PHYSICAL REVIEW B, 1970, 1 (04) :1628-&

[8] NEAR BAND-EDGE OPTICAL-ABSORPTION IN PURE GAAS [J].

HILL, DE .

SOLID STATE COMMUNICATIONS, 1972, 11 (09) :1187-&

[9]

LIPARIN O, 1970, PHYS REV LETT, V25, P1660

[10]

RASHBA EI, 1962, SOV PHYS-SOL STATE, V4, P759

← 1 2 →