PREPARATION OF 0.5-103OHM-CM GAAS BY ACCEPTOR PRECIPITATION DURING HEAT TREATMENT OF OXYGEN GROWN CRYSTALS

被引：43

作者：

WOODALL, JM

WOODS, JF

机构：

来源：

SOLID STATE COMMUNICATIONS | 1966年 / 4卷 / 01期

关键词：

D O I：

10.1016/0038-1098(66)90100-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：33 / &

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