TEM STUDIES OF EPITAXIAL CDTE AND (HG, CD)TE GROWN BY MOVPE ON GAAS AND CDTE SUBSTRATES

被引：24

作者：

BROWN, PD

HAILS, JE

RUSSELL, GJ

WOODS, J

机构：

[1] Univ of Durham, Durham, Engl, Univ of Durham, Durham, Engl

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

METALORGANIC VAPOR PHASE EPITAXY (MOVPE);

D O I：

10.1016/0022-0248(90)90768-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：511 / 515

页数：5

相关论文

共 23 条

[1] DEFECT STRUCTURE OF EPITAXIAL CDTE LAYERS GROWN ON (100) AND (111)B GAAS AND ON (111)B CDTE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BROWN, PD
HAILS, JE
RUSSELL, GJ
WOODS, J
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1144 - 1145
[2] CARY GP, 1985, J VACUUM SCI TECHN A, V3, P255
[3] IODINE ION MILLING OF INDIUM-CONTAINING COMPOUND SEMICONDUCTORS
CHEW, NG
CULLIS, AG
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 142 - 144
[4] CHEW NG, 1985, I PHS C SER, V78, P143
[5] CULLIS AG, 1985, I PHYS C SER, V76, P29
[6] Durose K., 1986, THESIS U DURHAM
[7] DUROSE K, 1985, I PHYS C SER, V76, P233
[8] MBE GROWTH OF CDTE, HG1-XCDXTE, AND MULTILAYER STRUCTURES - ACHIEVEMENTS, PROBLEMS, AND PROSPECTS
FARROW, RFC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 60 - 66
[9] A COMPARISON OF THE STRUCTURE OF CDTE AND (HG, CD)TE LAYERS GROWN BY MOVPE ON (111)A AND (111)B CDTE SUBSTRATES
HAILS, JE
RUSSELL, GJ
BROWN, PD
BRINKMAN, AW
WOODS, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 516 - 521
[10] THE EFFECT OF CDTE SUBSTRATE ORIENTATION ON THE MOVPE GROWTH OF CDXHG1-XTE
HAILS, JE
RUSSELL, GJ
BRINKMAN, AW
WOODS, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 940 - 945