DEFECT STRUCTURE OF EPITAXIAL CDTE LAYERS GROWN ON (100) AND (111)B GAAS AND ON (111)B CDTE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：41

作者：

BROWN, PD

HAILS, JE

RUSSELL, GJ

WOODS, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1144 / 1145

页数：2

共 13 条

[1] THE GROWTH OF CDTE/GAAS HETEROEPITAXIAL FILMS BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
ANDERSON, PL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2162 - 2168
[2] AN OVERVIEW ON DEFECT STUDIES IN MCT
CHEUNG, DT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 128 - 130
[3] CHEW NG, 1985, I PHS C SER, V78, P143
[4] CULLIS AG, 1985, I PHYS C SER, V76, P29
[5] A COMPARISON OF CDTE GROWN ON GAAS BY MOLECULAR-BEAM AND ORGANOMETALLIC VAPOR-PHASE EPITAXY
FELDMAN, RD
KISKER, DW
AUSTIN, RF
JEFFERS, KS
BRIDENBAUGH, PM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2234 - 2238
[6] GIESS J, IN PRESS MATER RES C
[7] TWIN NUCLEATION IN LAYERS OF CDTE ON [III] CDTE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
HAILS, JE
RUSSELL, GJ
BRINKMAN, AW
WOODS, J
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2624 - 2625
[8] THE EFFECT OF CDTE SUBSTRATE ORIENTATION ON THE MOVPE GROWTH OF CDXHG1-XTE
HAILS, JE
RUSSELL, GJ
BRINKMAN, AW
WOODS, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 940 - 945
[9] SUMMARY ABSTRACT - GROWTH OF CDTE AND HGCDTE BY MOLECULAR-BEAM EPITAXY
HARRIS, KA
HWANG, S
BLANKS, DK
COOK, JW
SCHETZINA, JF
OTSUKA, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 581 - 582
[10] EPITAXIAL-GROWTH OF CDTE ON GAAS BY MOLECULAR-BEAM EPITAXY
KOLODZIEJSKI, LA
GUNSHOR, RL
OTSUKA, N
CHOI, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2150 - 2152

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