A COMPARISON OF CDTE GROWN ON GAAS BY MOLECULAR-BEAM AND ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：24

作者：

FELDMAN, RD

KISKER, DW

AUSTIN, RF

JEFFERS, KS

BRIDENBAUGH, PM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574061

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：2234 / 2238

页数：5

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共 24 条

[1] ANDERSON PW, COMMUNICATION
[2] EVIDENCE FOR GAAS SUBSTRATE STRAIN CAUSED BY A CDTE EPITAXIAL LAYER
ARCH, DK
SCHMIT, JL
HORNING, RN
STAUDENMANN, JL
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 149 - 154
[3] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[4] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
BICKNELL, RN
YANKA, RW
GILES, NC
SCHETZINA, JF
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 313 - 315
[5] PARTIAL PRESSURES + GIBBS FREE ENERGY OF FORMATION FOR CONGRUENTLY SUBLIMING CDTE(C)
BREBRICK, RF
STRAUSS, AJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1441 - &
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES
FAURIE, JP
SIVANANTHAN, S
BOUKERCHE, M
RENO, J
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1307 - 1309
[7] FAURIE JP, 1986, J VAC SCI TECHNOL A, V4, P2076
[8] INFLUENCE OF GA-AS-TE INTERFACIAL PHASES ON THE ORIENTATION OF EPITAXIAL CDTE ON GAAS
FELDMAN, RD
AUSTIN, RF
KISKER, DW
JEFFERS, KS
BRIDENBAUGH, PM
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 248 - 250
[9] FELDMAN RD, UNPUB
[10] PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL
GILESTAYLOR, NC
BICKNELL, RN
BLANKS, DK
MYERS, TH
SCHETZINA, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 76 - 82