OBSERVATION OF AN INTERMEDIATE CHEMICAL STATE OF SILICON IN SI-SIO2 INTERFACE BY AUGER SPUTTER PROFILING

被引：78

作者：

HELMS, CR ^{[1
]}

STRAUSSER, YE ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] VARIAN ASSOC,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.90498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed, for the first time, a chemical state of silicon different from that of the pure bulk silicon or silicon in SiO2, using Auger electron spectroscopy. In the E N (E) spectra this state gives a major transition at 83.3 eV compared to 90.3 eV for bulk Si and 74.2 eV for SiO 2. We have observed this state both at the Si/SiO2 interface of MOS oxide structures during sputter profiling and for thin native oxides without sputtering. The state is difficult to see in the dE N (E)/dE spectra due to the presence of the sharp edge of the free silicon peak at 92 eV which tends to mask it.

引用

页码：767 / 769

页数：3