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ELECTRON DYNAMICS IN NEARLY PINCHED-OFF GAAS FIELD-EFFECT TRANSISTOR OPERATION
被引:9
作者
:
DEBLOCK, M
论文数:
0
引用数:
0
h-index:
0
DEBLOCK, M
FAUQUEMBERGUE, R
论文数:
0
引用数:
0
h-index:
0
FAUQUEMBERGUE, R
CONSTANT, E
论文数:
0
引用数:
0
h-index:
0
CONSTANT, E
BOITTIAUX, B
论文数:
0
引用数:
0
h-index:
0
BOITTIAUX, B
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1980年
/ 36卷
/ 09期
关键词
:
D O I
:
10.1063/1.91640
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:756 / 758
页数:3
相关论文
共 4 条
[1]
GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
[J].
GREBENE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GREBENE, AB
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1969,
12
(07)
:573
-+
[2]
Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[3]
CURRENT-VOLTAGE CHARACTERISTICS, SMALL-SIGNAL PARAMETERS, AND SWITCHING TIMES OF GAAS FETS
[J].
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
WAYNE STATE UNIV,DETROIT,MI 48201
WAYNE STATE UNIV,DETROIT,MI 48201
SHUR, MS
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
WAYNE STATE UNIV,DETROIT,MI 48201
WAYNE STATE UNIV,DETROIT,MI 48201
EASTMAN, LF
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
:606
-611
[4]
DRAIN CONDUCTANCE OF JUNCTION GATE FETS IN HOT-ELECTRON RANGE
[J].
YAMAGUCHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
YAMAGUCHI, K
;
KODERA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
KODERA, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(06)
:545
-553
←
1
→
共 4 条
[1]
GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
[J].
GREBENE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GREBENE, AB
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Research and Development Labs., Sunnyvale, CA
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1969,
12
(07)
:573
-+
[2]
Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[3]
CURRENT-VOLTAGE CHARACTERISTICS, SMALL-SIGNAL PARAMETERS, AND SWITCHING TIMES OF GAAS FETS
[J].
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
WAYNE STATE UNIV,DETROIT,MI 48201
WAYNE STATE UNIV,DETROIT,MI 48201
SHUR, MS
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
WAYNE STATE UNIV,DETROIT,MI 48201
WAYNE STATE UNIV,DETROIT,MI 48201
EASTMAN, LF
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
:606
-611
[4]
DRAIN CONDUCTANCE OF JUNCTION GATE FETS IN HOT-ELECTRON RANGE
[J].
YAMAGUCHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
YAMAGUCHI, K
;
KODERA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
KODERA, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(06)
:545
-553
←
1
→