ELECTRON DYNAMICS IN NEARLY PINCHED-OFF GAAS FIELD-EFFECT TRANSISTOR OPERATION

被引:9
作者
DEBLOCK, M
FAUQUEMBERGUE, R
CONSTANT, E
BOITTIAUX, B
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D O I
10.1063/1.91640
中图分类号
O59 [应用物理学];
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页码:756 / 758
页数:3
相关论文
共 4 条
[1]   GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].
GREBENE, AB ;
GHANDHI, SK .
SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+
[2]  
Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[3]   CURRENT-VOLTAGE CHARACTERISTICS, SMALL-SIGNAL PARAMETERS, AND SWITCHING TIMES OF GAAS FETS [J].
SHUR, MS ;
EASTMAN, LF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :606-611
[4]   DRAIN CONDUCTANCE OF JUNCTION GATE FETS IN HOT-ELECTRON RANGE [J].
YAMAGUCHI, K ;
KODERA, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :545-553