EXCESS NOISE MEASUREMENTS IN ION-IMPLANTED SILICON RESISTORS

[1] PHENOMENOLOGICAL APPROACH TO CURRENT NOISE [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (08): : 284 - 287

[2] Burstein E., 1957, SEMICONDUCTOR SURFAC

[3] Ion- implanted MOS technology [J]. Radiation Effects, 1971, 7 (1-2): : 45 - 57

[4] Mayer J. W., 1970, ION IMPLANTATION SEM

[5] MCDOUGALL JD, 1969, P IEEE, V57, P1538

[6] MULLER O, 1972, DEC S NOIS EL MAT DE

[7] SAH CT, 1964, P IEEE, V57, P795

[8] TANDON JL, 1973, THESIS OKLAHOMA STAT

[9] 1973, SWIEEECO RECORD, P561

[10] 1968, SEP C PHYS ASP NOIS

[1] PHENOMENOLOGICAL APPROACH TO CURRENT NOISE [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (08): : 284 - 287

[2] Burstein E., 1957, SEMICONDUCTOR SURFAC

[3] Ion- implanted MOS technology [J]. Radiation Effects, 1971, 7 (1-2): : 45 - 57

[4] Mayer J. W., 1970, ION IMPLANTATION SEM

[5] MCDOUGALL JD, 1969, P IEEE, V57, P1538

[6] MULLER O, 1972, DEC S NOIS EL MAT DE

[7] SAH CT, 1964, P IEEE, V57, P795

[8] TANDON JL, 1973, THESIS OKLAHOMA STAT

[9] 1973, SWIEEECO RECORD, P561

[10] 1968, SEP C PHYS ASP NOIS