DISSIPATIVE ELECTRON-TUNNELING FROM THE PHOSPHORUS GROUND-LEVEL TO THE CONDUCTION-BAND OF SILICON

被引：4

作者：

DARGYS, A

ZURAUSKIENE, N

机构：

[1] Semiconductor Physics Institute, 2600 Vilnius

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 07期

关键词：

D O I：

10.1063/1.359764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of thermal acoustic vibrations on impurity field ionization is investigated. At lattice temperatures T<15 K, when tunneling from the ground level predominates, thermal acoustic phonons in silicon are found to enhance phosphorus field ionization. The experiments are compared with recent theoretical calculations, which take into account the deformation potential interaction of thermal acoustic phonons with a localized center. (C) 1995 American Institute of Physics.

引用

页码：4802 / 4804

页数：3

共 11 条

[1]

Abakumov V. N., 1988, Soviet Physics - Solid State, V30, P1437

[2] TEMPERATURE-DEPENDENT FIELD-IONIZATION OF PHOSPHORUS ATOMS IN SILICON [J].