QUANTUM MODEL FOR PHONON-ASSISTED TUNNEL IONIZATION OF DEEP LEVELS IN A SEMICONDUCTOR

被引：267

作者：

MAKRAMEBEID, S ^{[1
]}

LANNOO, M ^{[1
]}

机构：

[1] INST SUPER ELECTRON NORD,F-59046 LILLE,FRANCE

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6406 / 6424

页数：19

共 28 条

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