SI/SIGE MMICS

被引:35
作者
LUY, JF
STROHM, KM
SASSE, HE
SCHUPPEN, A
BUECHLER, J
WOLLITZER, M
GRUHLE, A
SCHAFFLER, F
GUETTICH, U
KLAASSEN, A
机构
[1] DASA,ULM,GERMANY
[2] AEG TELEFUNKEN,RES CTR,ULM,GERMANY
关键词
D O I
10.1109/22.375215
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz, This paper gives a survey on the state-of-the-art performance of this technology and on first applications. The key devices are IMPATT diodes for mm-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits, The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f(max) values of more than 90 GHz is now used for low-noise oscillators at Ka-hand frequencies, First system applications are discussed.
引用
收藏
页码:705 / 714
页数:10
相关论文
共 26 条
[1]  
BUECHLER J, 1991, 21 EUR MICR C DIG ST, P352
[2]  
BUECHLER J, 1986, IEEE T MICROWAVE THE, P1516
[3]  
BUECHLER J, 1993, P MTT WORKSHOP MICRO, P34
[4]  
CLAASSEN M, 1994, SILICON BASED MM WAV
[5]  
CRABBE EF, 1993, P INT ELECTRON DEVIC, P83
[6]   TECHNOLOGY RELATED DESIGN OF MONOLITHIC MILLIMETER-WAVE SCHOTTKY DIODE MIXERS [J].
DIEUDONNE, JM ;
ADELSECK, B ;
SCHMEGNER, KE ;
RITTMEYER, R ;
COLQUHOUN, A .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (07) :1466-1474
[7]  
ERBEN U, IN PRESS
[8]   ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].
GRANT, WN .
SOLID-STATE ELECTRONICS, 1973, 16 (10) :1189-1203
[9]  
GRUHLE A, 1994, SILICON BASED MILLIM
[10]  
GUTTICH U, 1992, IEEE MICROW GUIDED W, P281