HIGH-FREQUENCY POWER IN TUNNEL DIODES

被引:14
作者
DERMIT, G
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1961年 / 49卷 / 06期
关键词
D O I
10.1109/JRPROC.1961.287887
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1033 / &
相关论文
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DERMIT G, 1960, TMU
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[5]   GALLIUM ARSENIDE TUNNEL DIODES [J].
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LESK, IA .
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[6]  
MURRAY RP, 1960, ELECTRONICS, V33, P82
[7]  
TRAMBARULO R, 1960, P IRE, V48, P1776