PIN PHOTODETECTOR UNDER TRANSIENT CONDITIONS - SIMULATION AND EXPERIMENTS

被引：5

作者：

CONTI, M

CORDA, G

DEPADOVA, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 02期

关键词：

D O I：

10.1016/0038-1101(79)90107-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An exact simulation of a Silicon PIN photodetector with transient light excitation is presented. The photodetector under consideration is designed to have good responsivity and fast response time in the wavelength range 0.6-0.95 μm which is of interest in fiber optic communication systems driven by GaAs and AlGaAs light sources. The photocurrent transient is computed for step and impulse light excitation using various values of reverse voltage, intrinsic layer thickness and doping. Good agreement is obtained between calculated and experimental waveforms. © 1979.

引用

页码：151 / 155

页数：5

共 9 条

[1] HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON [J].