DEEP ELECTRON TRAPS IN GAAS/N-ALXGA1-XAS SINGLE-QUANTUM WELLS

被引：22

作者：

AS, DJ

EPPERLEIN, PW

MOONEY, PM

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2408 / 2414

页数：7

共 20 条

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[9] CAPACITANCE SPECTROSCOPY STUDIES OF DEGRADED ALXGA1-XAS DH STRIPE-GEOMETRY LASERS [J].

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