CHEMICAL TRENDS IN THE ACTIVATION-ENERGIES OF DX CENTERS

被引：68

作者：

KUMAGAI, O

KAWAI, H

MORI, Y

KANEKO, K

机构：

[1] Sony Corp, Research Cent, Yokohama,, Jpn, Sony Corp, Research Cent, Yokohama, Jpn

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 12期

关键词：

D O I：

10.1063/1.95135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1322 / 1323

页数：2

共 9 条

[1] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3484-3491

[2]

Honda M., COMMUNICATION

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[5] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[6]

LANG DV, 1979, I PHYS C SER, V43, P433

[7] SYMMETRY OF DONOR-RELATED CENTERS RESPONSIBLE FOR PERSISTENT PHOTOCONDUCTIVITY IN ALXGA1-XAS [J].

NARAYANAMURTI, V ;

LOGAN, RA ;

CHIN, MA .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1536-1539

[8] DIRECT EVIDENCE FOR THE SITE OF SUBSTITUTIONAL CARBON IMPURITY IN GAAS [J].

THEIS, WM ;

BAJAJ, KK ;

LITTON, CW ;

SPITZER, WG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :70-72

[9]

WALLIS RH, 1980, I PHYS C SER, V56, P73

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