SYMMETRY OF DONOR-RELATED CENTERS RESPONSIBLE FOR PERSISTENT PHOTOCONDUCTIVITY IN ALXGA1-XAS

被引：33

作者：

NARAYANAMURTI, V

LOGAN, RA

CHIN, MA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.43.1536

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the attenuation of ballistic phonons generated in bulk GaAs and propagating through epitaxial layers of AlxGa1-xAs containing up to 1018 Sn or Te donors per cubic centimeter. The latter donors are known to form a complex with an unidentified defect (DX center) whose occupation is changed by photoexcitation. The symmetry of the ionized DX center is shown to be trigonal in the case of Sn and most likely orthorhombic in the case of Te donors. © 1979 The American Physical Society.

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页码：1536 / 1539

页数：4

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